NCE3401AY mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.4A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
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S Schematic diagram
* High power and current handing.
General Features
* VDS = -30V,ID = -4.4A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS.
The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -30V,ID.
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